DEPARTMENT.FACULTY

photo
Prof. Naushad Alam
  • DEPARTMENT_STAFF.QUALIFICATION

    PhD (IIT Roorkee)

  • DEPARTMENT_STAFF.DESIGNATION

    Professor

  • DEPARTMENT_STAFF.THRUST_AREA

    Microelectronics

  • DEPARTMENT_STAFF.ADDRESS

  • DEPARTMENT_STAFF.MOBILE

    9897165051

  • DEPARTMENT_STAFF.EMAIL

    naushad.el@zhcet.ac.in, naushad.el@amu.ac.in

  • DEPARTMENT_STAFF.TIME_TABLE

    Time-Table 2023-24

DEPARTMENT_STAFF.COMPLETE_CV
DEPARTMENT_STAFF.PROFILE

Naushad Alam received B. Tech. (ECE) degree from Jamia Millia Islamia, New Delhi ,  and M. Tech. (ECSD) degree from Aligarh Muslim University, Aligarh. He earned Ph.D. degree in Microelectronics from Indian Institute of Technology Roorkee, India. His doctoral work was on nanoscale circuit design considering the impact of process-induced mechanical stress. He has filed 2 Indian Patents and published 30 research papers in SCI indexed journals that include 10 IEEE Transactions. In addition, he has published 5 Book Chapters and 36 papers in reputed conferences such as IEEE ISQED, IEEE ISCAS, IEEE TENCON, IWPSD, VDAT, IEEE ISED, IEEE UPCON etc. He has received four Best Paper Awards at ICSCI-2008, IMPACT-2013, VDAT-2015 and IMPACT 2017 respectively and delivered thirteen invited talks at BIT Mesra (2014), MNIT Jaipur (2015), SPIT Mumbai (2015), ZHCET Aligarh (2016), SPIT Mumbai (2020), IIITM Gwalior (2022) and GEU Dehradun (2023) respectively. He has supervised three PhD theses and nineteen M Tech dissertations in the area of device-circuit co-design and presently supervising one PhD student. He has also successfully executed a UGC funded research project on TFET based SRAM cell design for IoT Applications. His research interests include device-circuit co-design, robust nanoscale circuit design, low power circuit design, PVT tolerant circuit design, Near-Threshold/Sub-Threshold circuit design etc. Presently, he is a Professor in the Department of Electronics Engineering at Aligarh Muslim University, Aligarh.

  1. Key Publications

    Journal Papers:

    1. Syed Afzal Ahmad, Naushad Alam, Shameem Ahmad, “Suppression of P-I-N Forward Leakage Current in Tunnel Field Effect Transistor”, Semiconductor Science and Technology (IOP), vol. 38, no. 9, pp. 095007, 2023. ISSN: 1361-6641

    2. Adeeba Sharif, Sayeed Ahmad, Naushad Alam, "A 9T SRAM Cell with Data-Independent Read Bitline Leakage and Improved Read Sensing Margin for Low Power Applications",  Semiconductor Science and Technology (IOP), vol. 37, no. 5, pp. 055001, 2022. ISSN: 1361-6641

    3. Mohd. Adil Raushan, Md. Yasir Bashir, Naushad Alam, Mohd. Jawaid Siddiqui, "Performance Improvement of Dopingless Transistor for Low Power Applications”, Silicon (Springer), vol. 14, no. 8, pp. 8009 - 8020, 2022. ISSN: 1876-9918. 

    4. Shazia Shakeel, Naushad Alam, “CNTFET based Radiation Hardened Latch”, Australian Journal of Electrical and Electronics Engineering (Taylor & Francis), vol. 18, no. 3, pp. 199-208, 2021. ISSN: 2205-362X.

    5. Syed Afzal Ahmad, Naushad Alam, “Design of Triple Pocket Multi Gate Material TFET Structure for Low Power Applications”, Semiconductor Science and Technology (IOP), Vol. 36, No. 2, pp. 025015, 2021. ISSN: 1361-6641
    6. Mohd. Yasir, Naushad Alam, “Design of TFET based Op-Amp and CCII for Low Voltage and Low Power Applications”, International Journal of Electronics (Taylor & Francis), Vol. 108, No. 10, pp. 1733-1753, 2021. ISSN: 0020-7217
    7. Mohd. Adil Raushan, Naushad Alam, Mohd. Jawaid Siddiqui, “Design approach to improve the performance of JAMFETs”, IET Circuits, Devices and Systems, Vol. 14, No. 3, pp. 333-339 2020. ISSN: 1751-8598
    8. Syed Afzal Ahmad, Naushad Alam, “Suppression of Ambipolarity in Tunnel-FETs using Gate Oxide as Parameter: Analysis and Investigation”, IET Circuits, Devices and Systems, Vol. 14, No. 3, pp. 288-293 2020. ISSN: 1751-8598
    9. Mohd. Yasir, Naushad Alam, “Design of CNTFET based CCII using gm/ID Technique for Low Voltage and Low Power Applications”, Journal of Circuits, Systems and Computers, Vol. 29, No. 9, pp. 1-20, 2020. ISSN: 0218-1266
    10. Mohd. Yasir, Naushad Alam, "Systematic design of CNTFET based OTA and Op Amp using gm/ID Technique", Analog Integrated Circuits and Signal Processing (Springer), Vol. 102, pp. 293–307, 2020 ISSN: 1573-1979
    11. Sayeed Ahmad, Syed Afzal Ahmad, Mohd. Muqeem, Naushad Alam, Mohd. Hasan, “TFET Based Robust 7T SRAM Cell for Low Power Applications”, IEEE Transactions on Electron Devices, vol. 66, no. 9, pp. 3834-3840, 2019. ISSN: 0018-9383
    12. Mohd. Adil Raushan, Naushad Alam, Mohd. Jawaid Siddiqui, “Electrostatically Doped Drain Junctionless Transistor for Low Power Applications”, Journal of Computational Electronics (Springer), vol. 18, no. 3, pp. 864-871, 2019. ISSN: 1572-8137
    13. Ahmed Shaban, Sayeed Ahmad, Naushad Alam, Mohd. Hasan, “Compact and Low Power 11T-2MTJ Non-Volatile Ternary Content Addressable Memory Cell with High Sense Margin”, Journal of Low Power Electronics (ASP), vol. 15, no. 2, pp. 193-203, 2019. ISSN: 1546-1998 
    14. Syed Afzal Ahmad, Naushad Alam, “Performance Improvement of Tunnel FET using Double Pocket”, Journal of Nanoelectronics and Optoelectronics (ASP), vol. 14, no. 8, pp.  1148–1157, 2019. ISSN: 1555-1318
    15. Mohd. Adil Raushan, Naushad Alam, Mohd. Jawaid Siddiqui, “Dopingless Tunnel Field Effect Transistor with Oversized Back Gate: Proposal and Investigation”, IEEE Transactions on Electron Devices, vol. 65, no. 10, pp. 4701-4708, 2018. ISSN: 0018-9383
    16. Sayeed Ahmad, Belal Iqbal, Naushad Alam, Mohd. Hasan, “Low Leakage Fully Half-Select-Free Robust SRAM Cells with BTI Reliability Analysis”, IEEE Transactions on Device and Materials Reliability, vol. 18, no. 3, pp. 337-349, 2018. ISSN: 1530-4388.
    17. Syed Afzal Ahmad, Naushad Alam, Syed Intekhab Amin, “Impact of Pocket-Size Variation on the Performance of GaAs0.1Sb0.9/InAs based Heterojunction Double Gate TFET”, Journal of Nanoelectronics and Optoelectronics (ASP), vol. 13, no. 7, pp. 1009-1018, 2018. ISSN: 1555-1318
    18. Arvind Sharma, Naushad Alam, Anand Bulusu, “Effective Drive Current for Near-threshold CMOS Circuits’ Performance Evaluation: Modeling to Circuit Design Techniques”, IEEE Transactions on Electron Devices, vol. 65, no. 6, pp. 2413-2421, 2018. ISSN: 0018-9383
    19. Mohd. Adil Raushan, Naushad Alam, Mohd Jawaid Siddiqui, “Performance enhancement of Junctionless TFET using dual-k Spacers”, Journal of Nanoelectronics and Optoelectronics (ASP), vol. 13, no. 6, pp. 912-920, 2018. ISSN: 1555-1318
    20. Mohd. Adil Raushan, Naushad Alam, Md Waseem Akram, Mohd Jawaid Siddiqui, “Impact of Asymmetric Dual-k Spacers on Tunnel Field Effect Transistors”, Journal of Computational Electronics (Springer), vol. 17, no. 2, pp. 756-765, 2018. ISSN: 1572-8137
    21. Sayeed Ahmad, Naushad Alam, Mohd. Hasan, “Robust TFET SRAM Cell for Ultra-Low Power IoT Applications”, International Journal of Electronics and Communications (Elsevier), vol. 89, pp. 70-76, 2018. ISSN: 1434-8411
    22. Sayeed Ahmad, Naushad Alam, Mohd. Hasan, “Pseudo Differential Multi-Cell Upset Immune Robust SRAM Cell for Ultra-Low Power Applications”, International Journal of Electronics and Communications (Elsevier), vol. 83, pp. 366-375, 2018. ISSN: 1434-8411
    23. Arvind Sharma, Naushad Alam, Anand Bulusu, “Effective Current Model for Inverter-Transmission Gate Structure and Its Application in Circuit Design”, IEEE Transactions on Electron Devices, Vol. 64, No. 10, pp. 4002 - 4010, 2017. ISSN: 0018-9383
    24. Sayeed Ahmad, M. K. Gupta, Naushad Alam, Mohd. Hasan, " Low Leakage Single Bitline 9T (SB9T) Static Random Access Memory", Microelectronics Journal (Elsevier), Vol. 62, pp. 1-11, 2017. ISSN: 0026-2692
    25. Sayeed Ahmad, M. K. Gupta, Naushad Alam, Mohd. Hasan, "Single-Ended Schmitt-Trigger Based Robust Low Power SRAM Cell", IEEE Transactions on VLSI Systems, vol. 24, no. 8, pp. 2634-2642, 2016. ISSN:1063-8210
    26. Baljit Kaur, Arvind Sharma, Naushad Alam, Sanjeev K. Manhas, Bulusu Anand, “A Variation Aware Timing Model for a 2-Input NAND Gate and Its Use in Sub-65nm CMOS Standard Cell Characterization”, Microelectronics Journal (Elsevier), vol. 53, pp. 45-55, 2016. ISSN: 0026-2692
    27. Arvind Sharma, Naushad Alam, Sudeb Dasgupta, Bulusu Anand, “Multifinger MOSFETs’ Optimization Considering Stress and INWE in Static CMOS Circuits”, IEEE Transactions on Electron Devices, vol. 63, no. 6, pp. 2517-2523, 2016. ISSN: 0018-9383
    28. Baljit Kaur, Naushad Alam, Sanjeev K. Manhas, Bulusu Anand, “Efficient ECSM Characterization Considering Voltage, Temperature and Mechanical Stress Variability”, IEEE Transactions on Circuits and Systems-I, vol. 61, no. 12, pp. 3407 - 3415, 2014. ISSN:1549-8328.
    29. Naushad Alam, Bulusu Anand, and Sudeb Dasgupta, “An Analytical Delay Model for Mechanical Stress Induced Systematic Variability Analysis in Nanoscale Circuit Design”, IEEE Transactions on Circuits and Systems-I, vol. 61, no.6, pp. 1714-1726, 2014. ISSN:1549-8328
    30. Naushad Alam, Bulusu Anand, and Sudeb Dasgupta, “The Impact of Process-Induced Mechanical Stress in Narrow Width Devices and Variable Taper CMOS Buffer Design”, Microelectronics Reliability (Elsevier), vol. 53, no. 5, pp. 718–724, 2013. ISSN: 0026-2714
    31. Naushad Alam, Bulusu Anand, and Sudeb Dasgupta, “The Impact of Process-Induced Mechanical Stress on CMOS Buffer Design using Multi-Fingered Devices”, Microelectronics Reliability (Elsevier), vol. 53, no. 3, pp. 379–385, 2013. ISSN: 0026-2714
    32. Naushad Alam, Bulusu Anand, and Sudeb Dasgupta, “Gate-Pitch Optimization for Circuit Design Using Strain-Engineered Multi-Finger Gate structures”, IEEE Transactions on Electron Devices, vol. 59, no. 11, pp. 3120-3123, 2012.
      ISSN: 0018-9383

LISTDownloadUPLOADED DATE
Solution Sheet of Mid Term Paper (EL-203)
04/04/2017
Tutorial Sheet-II for EL-203
09/03/2017
Tutorial Sheet-I for EL-203
07/03/2017
Electronics Lab (EL-294X) Sheets_B.Tech._II_Year
31/01/2017
Tutorial_Sheet-II_EL-315
28/10/2016
EL-315-Unit-II
11/10/2016
EL-621_Unit-II
11/10/2016
Tutorial_Sheet-I(EL-315)
30/09/2016
EL-315_Unit-II-Part-I
15/09/2016
VLSI Design (EL-621)
03/09/2016
VLSI Design & Technology (EL-315)
02/09/2016
Sessional Marks of Digital System Design (ELC3620) 2019-20
13/06/2020
Sessional Marks VLSI Technology (ELE6210)
14/06/2020
Sessional Marks of B. Tech. Project (EL490B) 2019-20
15/06/2020